Authors: F. Prégaldiny, F. Krummenacher, J.-M. Sallese, B. Diagne and C. Lallement
Affilation: InESS, France
Pages: 686 - 691
Keywords: double-gate MOSFET, transcapacitance, EKV, compact modeling
This paper presents a closed-form compact model for the undoped double-gate (DG) MOSFET under symmetrical operation. This charge-based model aims at giving a comprehensive understanding of the device from the circuit design point of view. Both static and dynamic models are derived in terms of simple analytic relationships based on our new explicit formulation of the mobile charge density. Our approach is derived from physics and relies on the EKV formalism originally developed for bulk MOSFETs. The model takes into account the mobility degradation and the DIBL (Drain-Induced Barrier Lowering) and is valid for devices with channel length down to 100 nm. Comparisons with 2D numerical simulations give evidence for the accuracy of the model. Furthermore, the VHDL-AMS code of the presented model leads to fast simulations, thus demonstrating that the model is well-suited for circuit simulation.