Authors: G. Gildenblat, X. Li, H. Wang, W. Wu, A. Jha, R. van Langevelde, A.J. Scholten, G.D.J. Smit and D.B.M. Klaassen
Affilation: Pennsylvania State University, United States
Pages: 604 - 609
Keywords: compact MOSFET model, PSP, surface potential
This paper describes theoretical foundation and details of the new compact modeling techniques used in the advanced surface-potential-based compact MOSFET model PSP, jointly developed by the Pennsylvania State University and Philips Research. Specific topics include surface potential equation, generalized symmetric linearization method and non-uniformity of the vertical impurity profile.