Authors: M-W Ma, T-S Chao, K-S Kao, J-S Huang and T-F Lei
Affilation: National Chiao Tung University, Taiwan
Pages: 59 - 62
Keywords: S/D extension shift, high-k offset spacer, fringing electric field, SOI
In this paper, fully depleted (FD) SOI devices with S/D extension shift and high-k offset spacer were investigated in detail. The results show that the S/D extension shift can decrease Ioff significantly to reduce standby power dissipation, but Ion is also decreasing simultaneously. In order to overcome this disadvantage, the high-k offset spacer is used to increase Ion effectively due to the enhanced vertical fringing electric field. Consequently, a FD SOI device with 8nm S/D extension shift and TiO2 offset spacer can possess high Ion and ultra-low Ioff about 0.003 times lower than conventional SOI structure.
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