Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Nano and Molecular Electronics and Photonics Chapter 1

Mobility of Electrons in Rectangular Si Nanowires

Authors: E. Ramayya, D. Vasileska, S.M. Goodnick and I. Knezevic

Affilation: Arizona State University, United States

Pages: 13 - 15

Keywords: discrete impurity effects, unintentional doping, interface traps, nanowires, Monte Carlo

We investigate two issues in this paper. First, we examine the role of interface-traps on the device drain current in an SOI nanowire MOSFET. Afterwords, we investigate the role of the interface-roughness on the low-field electron mobility using the Ando model which is more sophisticated with respect to the model used in the device simulator.

ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95

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