Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Nano and Molecular Electronics and Photonics Chapter 1

A Defect Model for Metallic Carbon Nanotubes in Cell-based Logic Circuits

Authors: H. Hashempour and F. Lombardi

Affilation: Northeastern University, United States

Pages: 47 - 50

Keywords: CNTFET, metallic CNT, source-drain short FET, defect modeling

Carbon Nanotube based Field Effect Transistors (CNTFET) are promising nano scaled devices for implementing high performance, highly integrated, and low power circuits. The main component of a CNTFET is a single-wall <br>carbon nanotube (SWCNT); its conductance is determined by the so-called chirality of the tube and is extremely hard to control during manufacturing. Conducting nanotubes can lead to defective CNTFETs similar to source-drain short faults in Metal Oxide Semiconductor Field Effect <br>Transistors (MOSFET). This paper presents a model and a corresponding<br>detection technique for nano scaled defects arising from the presence of metallic carbon nanotubes. Using an optimal layout of CNTFET based circuits, such defects are modeled by traditional stuck-at faults (SSF) and detected by SSF test sets.

ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95

2015 & Newer Proceedings

Nanotech Conference Proceedings are now published in the TechConnect Briefs

NSTI Online Community