Authors: H. Hashempour and F. Lombardi
Affilation: Northeastern University, United States
Pages: 47 - 50
Keywords: CNTFET, metallic CNT, source-drain short FET, defect modeling
Carbon Nanotube based Field Effect Transistors (CNTFET) are promising nano scaled devices for implementing high performance, highly integrated, and low power circuits. The main component of a CNTFET is a single-wall <br>carbon nanotube (SWCNT); its conductance is determined by the so-called chirality of the tube and is extremely hard to control during manufacturing. Conducting nanotubes can lead to defective CNTFETs similar to source-drain short faults in Metal Oxide Semiconductor Field Effect <br>Transistors (MOSFET). This paper presents a model and a corresponding<br>detection technique for nano scaled defects arising from the presence of metallic carbon nanotubes. Using an optimal layout of CNTFET based circuits, such defects are modeled by traditional stuck-at faults (SSF) and detected by SSF test sets.