Authors: J.L. Lue, H.W Liu, E. Wu, B. Pai, S. Fan and T. Wang
Affilation: ProMOS Technologies Inc, Taiwan
Pages: 753 - 755
Keywords: deep trench, SCM, DRAM, 2-D doping
This paper discusses the removal of the doped-polysilicon of a gate transistor by wet chemical etching containing the spacer oxide and nitride that remain. This technique significantly improves the image quality of 2-D doping profile of SCM that properly provides the results of the desired device structures for inline monitoring and failure analysis or for product characterization.
Nanotech Conference Proceedings are now published in the TechConnect Briefs