Nanotech 2006 Vol. 1
Nanotech 2006 Vol. 1
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1

Characterization Chapter 8

A Novel Approach of Sample Preparation for SCM Inspection in the DRAM Device Structures

Authors: J.L. Lue, H.W Liu, E. Wu, B. Pai, S. Fan and T. Wang

Affilation: ProMOS Technologies Inc, Taiwan

Pages: 753 - 755

Keywords: deep trench, SCM, DRAM, 2-D doping

This paper discusses the removal of the doped-polysilicon of a gate transistor by wet chemical etching containing the spacer oxide and nitride that remain. This technique significantly improves the image quality of 2-D doping profile of SCM that properly provides the results of the desired device structures for inline monitoring and failure analysis or for product characterization.

ISBN: 0-9767985-6-5
Pages: 871
Hardcopy: $119.95