Impacts of High-k Offset Spacer on 65-nm Node SOI Devices

Ma M-W, Chao T-S., Kao K-S, Huang J-S, Lei T-F
National Chiao Tung University, TW

Keywords: fringing electric field, high-k offset spacer, SOI

In this paper, the 65-nm node SOI devices with high-k offset spacer was investigated. Calculated results show that the high-k offset spacer can effectively increase Ion and reduce Ioff due to the high vertical fringing field effect arising from the side capacitor comprising of gate/offset spacer/drain extension structure. This fringing field and, in turn, the Ion/Ioff current ratio and subthreshold swing can be strongly enhanced by increasing the dielectric constant of the offset spacer.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 7, 2006
Pages: 697 - 700
Industry sector: Advanced Materials & Manufacturing
Topic: Informatics, Modeling & Simulation
ISBN: 0-9767985-6-5