Authors: S.C. Brugger and A. Schenk
Affilation: Swiss Federal Institut of Technology, Switzerland
Pages: 673 - 676
Keywords: device simulation, Monte Carlo, generation-recombination, impact ionisation
A new one-particle Monte Carlo iteration scheme has been found to<br>self-consistently take into account generation-recombination<br>processes. The basic idea is to couple the BTE not only with the<br>Poisson equation, but also with the continuity equation by using the<br>exact transport coefficients from the MC simulation in high-field<br>regions and the known analytical transport coefficients in low-field<br>regions. This approach will be useful e.g. for the simulation of<br>floating body effects in nanoscale double- and multi-gate SOI MOSFETs.