Antonov D.A., Filatov D.O., Maximov G.A., Zenkevich A.V., Lebedinskii Yu.Yu.
Nizhni Novgorod State University, RU
Keywords: Combined AFM\STM, electronic properties, HfO2, MeOx, MOS structures, silicide, thin films, ZrO2
The advantages of the combined AFM/STM technique for investigating the dielectric properties of ultrathin MeOx layers with high spatial resolution is shown. Particularly, MO2/Si (M=Hf, Zr) interface evolution upon heat treatments is explored. It is observed that vacuum annealing in the range Ò =800-900 °Ñ of ZrO2 films grown on Si results in the degradation ZrO2,HfO2 with formation of a Zr, Hf silicide layer which starts to grow from ZrO2/Si, HfO2/Si interface.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 7, 2006
Pages: 258 - 260
Industry sector: Advanced Materials & Manufacturing
Topics: Advanced Materials for Engineering Applications, Coatings, Surfaces & Membranes
ISBN: 0-9767985-6-5