Authors: T. Iwasaki, G. Zhong, T. Yoshida, T. Aikawa, R. Morikane and H. Kawarada
Affilation: Waseda University, Japan
Pages: 94 - 97
Keywords: vertically aligned SWNT, millimeter long, root growth mode
Controlling the growth direction of SWNTs on a substrate is one of the most important issues for fabrication of SWNT-based applications, such as field effect transistors (FETs) and interconnects for LSI. We have succeeded in synthesizing vertically aligned SWNTs with lengths on the order of millimeters for a long time deposition　by a point-arc microwave plasma CVD. The height of SWNTs is 1.5mm in 10 hours. The Fe catalytic particles were kept active after the growth of SWNTs for more than 20 hours. A surface density of 1E16/m2 was obtained and this value corresponds to 1/10 of the closed-packed density. High density is very attractive for multi-layer interconnects for LSI and a super capacitor. We also clarified the growth mode of vertically aligned SWNTs using a new method called Marker Growth. Two layers of SWNTs were synthesized intermittently for different growth times. Considering the thickness and the growth time, we could identify the two layers using a line between the layers as a marker. As a result, the root growth mode of vertically aligned SWNTs was successfully clarified.