Nanotech 2005 Vol. 3
Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3

MEMS/NEMS Design and Applications Chapter 8

Fabrication and Characterization of MOS Transistor Tip Integrated Micro Cantilever

Authors: S.H. Lee, G. Lim and W. Moon

Affilation: Pohang University of Science and Technology, Korea

Pages: 505 - 508

Keywords: MOS transistor tip, anisotropic wet etching, compensator, future high-density data storage system, scanning probe microscope

In this paper, we fabricate and characterize the metal-oxide-semiconductor (MOS) transistor tip integrated micro cantilever, which is proposed for a future high-density data storage system. The integrated MOS transistor tip as the sensing part has some advantages; it detects the electric signal with the fast speed compared with the previous SPM probes, and it can reduce the required equipments such as the lock-in-amplifier. The MOS transistor tip is fabricated 3-dimensionally, utilizing the lateral diffusion and the anisotropic wet etching with TMAH solution, since the etch rate of {211} plane is much higher than those of {100} or {111} planes. The gate area is formed by self-aligned technique, using crystallographic dependant wet etching. The well-known convex corner compensation pattern is used for the gate length control during the tip fabrication process. The characteristics of the fabricated device are measured and the results show the well-established detection properties. The MOS transistor tip integrated micro cantilever can be used for a micro-scale topology sensor, a charge sensor as well as the probe head of the future high-density data storage system, since the integrated MOS transistor tip is highly sensitive and detectable with the quick variation of the electric signal.

ISBN: 0-9767985-2-2
Pages: 786
Hardcopy: $109.95

2015 & Newer Proceedings

Nanotech Conference Proceedings are now published in the TechConnect Briefs

NSTI Online Community