Nanotech 2005 Vol. 3
Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3

Nano Scale Electronics Processing Chapter 4

Low Voltage Electron Beam Lithography in PMMA

Authors: M. Bolorizadeh and D.C. Joy

Affilation: University of Tennessee, United States

Pages: 267 - 270

Keywords: electron lithography, scanning electron microscope, atomic force microscope, PMMA

To examine the practical limits and problems of low voltage operation, we have studied electron beam lithography (EBL) in the low (few keV) to ultra-low (E < 100eV) energy range, employing commonly used resists such as PMMA and compared the results to those from conventional high voltage processing. The direct writing was performed at low energies by our homemade scan generator and a Schottky field emission gun scanning electron microscope (SEM), used in cathode-lens mode for ultra-low voltage operation. The exposure characteristics and sensitivity of the system at these energies have been investigated using an advanced Monte Carlo simulation method. Our modeling of the lithographic process showed a significant increase in resolution and process latitude for thinner resists.

ISBN: 0-9767985-2-2
Pages: 786
Hardcopy: $109.95

2015 & Newer Proceedings

Nanotech Conference Proceedings are now published in the TechConnect Briefs

NSTI Online Community