Authors: M. Pourfath, A. Gehring, B.H. Cheong, W.J. Park, H. Kosina and S. Selberherr
Affilation: Vienna University of Technology, Austria
Pages: 128 - 131
Keywords: carbon nanotube field effect transistors, double gate structure, ambipolar behavior
Vertically grown carbon nanotubes have the potential for tera-level Integration. However, the well-known ambipolar behavior limits the performance of carbon nanotube field effect transistors. In this work we demonstrate that a double gate structure effectively suppresses the ambipolar behavior. Using the double gate design excellent device characteristics along with the potential for high scale integration are achieved, which are necessary for future nanoelectronic applications.