Authors: A. Sakai, Y. Kamakura and K. Taniguchi
Affilation: Osaka University, Japan
Pages: 180 - 183
Keywords: quantum lattice-gas automata, quantum tunneling, surface roughness
We present the two-dimensional simulation of quantum tunneling considering the rough surface. It is demonstrated that the electron transmission through the potential barrier is significantly affected by the surface roughness pattern even if the same roughness parameter is assumed. We consider that the variation of the $T$ depending on the surface roughness patterns would become one of the source of the device fluctuation in the agressively scaled MOSFETs.
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