Nanotech 2005 Vol. 3
Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3

CNT, Nano and Molecular Electronics Chapter 2

Influence of Si Nanocrystal Distribution on Electrical Characteristics of MOS Structures

Authors: Y. Liu, T.P. Chen, C.Y. Ng and L. Ding

Affilation: Nanyang Technological University, Singapore

Pages: 146 - 149

Keywords: Si nanocrystal, MOS, charge trapping

In this work, Si nanocrystals with different distributions were embedded in the gate oxide with ion implantation technique. C-V and time-domain capacitance measurements were conducted to study the electrical characteristics of MOS structures. It is observed that charge trapping in nc-Si with different distributions in the gate oxide leads to different behaviors in MOS electrical characteristics.

ISBN: 0-9767985-2-2
Pages: 786
Hardcopy: $109.95

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