Authors: Y. Liu, T.P. Chen, C.Y. Ng and L. Ding
Affilation: Nanyang Technological University, Singapore
Pages: 146 - 149
Keywords: Si nanocrystal, MOS, charge trapping
In this work, Si nanocrystals with different distributions were embedded in the gate oxide with ion implantation technique. C-V and time-domain capacitance measurements were conducted to study the electrical characteristics of MOS structures. It is observed that charge trapping in nc-Si with different distributions in the gate oxide leads to different behaviors in MOS electrical characteristics.