Nanotech 2005 Vol. 3
Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3

CNT, Nano and Molecular Electronics Chapter 2

Using Ultra-long Nanotubes to Make Identical CNT FETs
Z. Yu, C. Rutherglen, S. Li and P.J. Burke
University of California, Irvine, US

Centimetre-Long Carbon Nanotubes from Ethanol Decomposition
L.X. Zheng, M.J. O'Connell, S.K. Doorn, X.Z. Liao, Y.H. Zhao, M.A. Hoffbauer, Q.X. Jia, D.E. Peterson, J. Liu, and Y.T. Zhu
Los Alamos National Lab, US

Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration
M. Pourfath, A. Gehring, B.H. Cheong, W.J. Park, H. Kosina and S. Selberherr
Vienna University of Technology, AT

Single-Walled Carbon Nanotubes with Small Diameter, Controlled Density and Defined Locations Produced from Catalyst-Containing Polymer Films
J. Lu, T.E. Kopley, M. Hueschen, N. Moll, J. Bai, D.Y.Q. Fu, J. Liu, D. Rider, I. Manners and M.A. Winnik
Agilent Technologies, US

The Effect of Source/Drain Extension Asymmetry on the Leakage Current of Ohmicly-contacted Carbon Nanotube FETs
K. Alam and R. Lake
University of California Riverside, US

DNA-Based Nanotechnology: Highly Luminescent CdSe – DNA Nanoscale – Engineered Complexes
V. Kislov, M. Artemyev, G. Khomutov
Russian Academy of Sciences, RU

XPS Studies of Silicon Nanoclusters/Nanocrystals Embedded in SiO2 Matrix
T.P. Chen and Y. Liu
Nanyang Technological University, SG

Influence of Si Nanocrystal Distribution on Electrical Characteristics of MOS Structures
Y. Liu, T.P. Chen, C.Y. Ng and L. Ding
Nanyang Technological University, SG

Study of Cutoff Frequency Calculation in the Subthreshold Regime of Operation of the SOI - MESFETs
K. Tarik, D. Vasileska and T.J. Thornton
Arizona state University, US

Observation of Soft-Breakdown in Ultra-Thin SiO2 Films under Repetitive Ramped Voltage Stress by Using Conductive Atomic Force Microscopy
Y-L Wu, S-T Lin and J-C Liao
National Chi-Nan University, TW

A Nanocore/CMOS Hybrid System-on-Package (SoP) Architecture for Future Nanoelectronic Systems
R. Weerasekera, J. Liu, L-R Zheng and H. Tenhunen

Quantum Information Processing with Nuclear Spin-Based Devices
T.F. Havel, P. Cappellaro, C. Ramanathan and D.G. Cory
Massachusetts Institute of Technology, US

Impedance Characterization of Dielectric and Semiconducting Materials with Organic Capacitors for Organic Transistors
C.M. Li, L.K. Pan, C.Q. Sun, J. Zhang and D. Gamota
Nanyang Technological University, SG

Low Temperature Volatile-Organic-Compound (VOC) Sensor Based on Tungsten Oxide Nanorods
Y.S. Kim, Y.T. Kim and K. Lee
Electronics and Telecommunications Research Institute (ETRI), KR

Tunable Wideband Microwave Band-Stop and Band-Pass Filters Using YIG/GGG-GaAs Layer Structures
C.S. Tsai, G. Qiu, H. Gao, G.P. Li, L.W. Yang and S.A. Nikitov
University of California, Irvine, US

CMOS Architectures for NOR & NAND Logic Gates Using Single Electron Transistors
A. Venkataratnam and A.K. Goel
Michigan Technological University, US

Two-Dimensional Simulation of Tunneling Using Quantum Lattice-Gas Automata
A. Sakai, Y. Kamakura and K. Taniguchi
Osaka University, JP

Application-specific Molecular Logic Systems
M. Zgol, R.G. Wright, D. Adebimpe and T. Callinan
GMA Industries, Inc., US

Construction and Electrical Characterization of 0.9 nm Tall Channels Made via Pyryl Phosphonic Acid (PYPA) Self-assembly
J. Dong, B.A. Parviz, H.L. Yip, H. Ma and A.K-Y. Jen
University of Washington, US

Molecular Nanocluster Electronics: Organized Superstructures at Nanoscale and New Functional Nanomaterials
V. Kislov, Yu. Gulyaev, B. Medvedev, I. Taranov, V. Kolesov, V. Kashin, S. Gubin, G. Khomutov, E. Soldatov, M. Artemiev and S. Gurevich
Russian Academy of Sciences, RU

The Computational Abilities of Random Magnetic Structures
P. Thenappan, S. Madala and J.C. Lusth
University of Arkansas, US

Bayesian Modeling of Quantum-Dot Cellular Automata Circuits
S. Bhanja and S.N. Srivastava
University of South Florida, US

Novel Nonvolatile Logic Circuits with Three-Dimensionally Stacked Nanoscale Memory Device
K. Abe, S. Fujita and T.H. Lee
Toshiba Corporation, JP

ISBN: 0-9767985-2-2
Pages: 786
Hardcopy: $109.95