Authors: C.D. Nguyen, C. Jungemann and B. Meinerzhagen
Affilation: Technical University Braunschweig, Germany
Pages: 33 - 36
Keywords: MOS devices, quantization effects, inversion layer, strained Si
An Improved Modified Local Density Approximation (IMLDA) model for the electron inversion layer in strained Si-nMOSFETs is presented which correctly describes the impact of size quantization on the threshold voltage and capacitance without increasing the computation time. The IMLDA model yields results consistent with the self-consistent solution of the Schroedinger and Poisson equations (SE/PE) for a wide range of strain, temperature and doping concentrations. A big advantage of the IMLDA model is its low computation time and its numerical robustness, because it depends only on local quantities and not on solution variables of the numerical model. Additionally, this model is well suited for software implementation in existing TCAD device simulators.
Nanotech Conference Proceedings are now published in the TechConnect Briefs