Nanotech 2005 Vol. 3
Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3

Nanoscale Device and Process Modeling Chapter 1

Simulation of Dynamic NBTI Degradation for a 90nm CMOS Technology

Authors: R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring and S. Selberherr

Affilation: Vienna University of Technology, Austria

Pages: 29 - 32

Keywords: transistor reliability simulation, NBTI degradation, lifetime estimation

The NBTI degradation was systematically investigated for a 90nm p-MOSFET by simulation and experiment. The reaction-diffusion model was extended for NBTI simulations at arbitrary gate voltage, frequency, and duty cycle within a calibrated range. Long-time NBTI degradation was simulated up to 10 years in order to estimate the transistor lifetime under typical chip operation conditions.

ISBN: 0-9767985-2-2
Pages: 786
Hardcopy: $109.95

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