Nanoscale Device and Process Modeling

Kinetic Monte Carlo Simulation of Defect-Mediated Organization in Quantum Dot Self-Assembly

Gao D., Kaczynski A., Jaszczak J.A., Michigan Technological University, US

A good understanding of quantum dot (QD) self assembly not only has the potential to augment standard materials patterning technologies but also has applications in industrial nanostructure fabrications. Many observations and insights about self-assembled quantum [...]

Modeling of Germanium/Silicon Interdiffusion in Silicon/Silicon Germanium/Silicon Single Quantum Well Structures

Hasanuzzaman M., Haddara Y.M., McMaster University, CA

Intermixing at heterointerfaces and the broadening of the SiGe layer in a Si/SiGe/Si single quantum well (SQW) structure can be detrimental to device performance. Thus it is important to develop predictive models for interdiffusion phenomena [...]

Multi-Scale Computational Framework: Theoretical approach and application for the growth of carbon nanotubes

Vasenkov A.V., Fedoseyev A.I., Kolobov V.I., Hong Ki-Ha, Choi H.S., Kim J., Kim K.H., Kim J., Kim K.H., Lee H.S., Shin J-K, CFD Research Corporation, US

The current rapid development of nanotechnology has created a significant interest to predict the behavior of materials from the atomic to the engineering scales. However, it was found that such prediction is a very challenging [...]

A Physically-Based Electron Mobility Model for Strained Si Devices

Dhar S., Kosina H., Palankovski V., Ungersboeck E., Selberherr S., TU Vienna, AT

A model describing the mobility tensor for electrons in strained Si layers as a function of strain is presented. It includes the effect of strain-induced splitting of the conduction band valleys in Si, inter-valley scattering, [...]

Spin Polarization in GaAs/Al0.24Ga0.76As Heterostructures

Ashok A., Akis R., Vasileska D., Ferry D.K., Arizona State University, US

Spintronics is a new branch of electronics which involves the active control and manipulation of spin degrees of freedom in solid-state devices. Spin transport differs from charge transport as spin is a non-conserved quantity in [...]

A Comprehensive Kinetic Model for Wet Oxidation of Silicon Germanium Alloys

Rabie M.A., Haddara Y.M., Carette J., McMaster University, CA

Our objective is to study the kinetics of SiGe oxidation with a view to studying factors that would improve the quality of the oxide. We propose a model based on the simultaneous oxidation of both [...]

Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium

Jungemann C., Grasser T., Meinerzhagen B., Technische Universität Braunschweig, DE

The shrinking of the device dimensions below 100nm is pushing the classical TCAD tools like the drift-diffusion (DD) or hydrodynamic (HD) models to their limits. While the impact of the shrinking on the accuracy of [...]

Simulation of Dynamic NBTI Degradation for a 90nm CMOS Technology

Wittmann R., Puchner H., Hinh L., Ceric H., Gehring A., Selberherr S., Vienna University of Technology, AT

The NBTI degradation was systematically investigated for a 90nm p-MOSFET by simulation and experiment. The reaction-diffusion model was extended for NBTI simulations at arbitrary gate voltage, frequency, and duty cycle within a calibrated range. Long-time [...]

Modeling of Size Quantization in Strained Si-nMOSFETs with the Improved Modified Local Density Approximation

Nguyen C.D., Jungemann C., Meinerzhagen B., Technical University Braunschweig, DE

An Improved Modified Local Density Approximation (IMLDA) model for the electron inversion layer in strained Si-nMOSFETs is presented which correctly describes the impact of size quantization on the threshold voltage and capacitance without increasing the [...]

Low Field Electron Mobility in Ultra-Thin Strained-Si Directly on Insulator MOSFET in Sub-0.1µm Regime

Amtablian S., Barraud S., CEA-DRT/LETI, FR

A 200 word (or less) text only summThe fabrication of Fully-Depleted strained-Si directly on insulator (SSOI) MOSFET was recently demonstrated. The combination of strain-induced transport property with the scaling advantage of ultra-thin body devices is [...]

Examination of the Effects of Unintentional Doping on the Operation of FinFETs with Monte Carlo Simulation Integrated with Fast Multipole Method (FMM)

Khan H., Ahmed S.S., Vasileska D., Arizona State University, US

Novel device structures such as dual gate SOI, Ultra thin body SOI, FinFETs, etc. have emerged as a solution to the ultimate scaling limits of conventional bulk MOSFETs. In this paper, we use a semi-classical [...]

Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices

Entner R., Gehring A., Kosina H., Grasser T., Selberherr S., TU Vienna, AT

In this work a new approach for modeling gate leakage currents for memory cells which are highly degraded is proposed. In thicker dielectrics which are subject to high field stress and can therefore have a [...]

Electronic Properties of Gaphitic Surfaces with Adsorbed Aromatic Amino Acids

Roman C., Ciontu F., Courtois B., Tima Laboratory, FR

The electronic properties of aromatic amino acids physisorbed on graphene are investigated in view of establishing if carbon nanotube transconductance sensors can respond to this type of chemical stimuli. Several conclusions are drawn regarding both [...]

Mismatch Improvement with XMOS Structure

Tan P.B.Y., Kordesch A.V., Sidek O., Silterra Malaysia Sdn Bhd, MY

MOS transistor has been continuously scaled down to improve the device performance. Smaller MOS transistors have higher transconductance (gm) and low capacitance, so the ratio gm/C is improved by shrinking. Shorter gate length provides higher [...]

Analytical Surface Potential Model with Polysilicon Gate Depletion Effect for NMOS

Cumberbatch E., Abebe H., Morris H., Tyree V., USC/ISI MOSIS, US

Different modeling approaches for the sub-100nm MOSFET are discussed in [1] and the surface potential description model is reported to be promising, [1, 2]. Surface potential changes impact gate capacitance and current-voltage (I-V) characteristics of [...]

Controllable Electron Transport in the Lateral Nanostructure

Pogrebnyak V.A., Akray E., Küçükaltun A.N., Cukurova University, TR

The study of two-dimensional electronic systems evokes considerable interest due to the broad utilization of the systems in nanotechnology. Design of new devices are commonly based on exploiting the different configurations of multiple-quantum-well (MQW) structures. [...]

MOSFET Analytical Inversion Charge Model with Quantum Effects using a Triangular Potential Well Approximation

Abebe H., Cumberbatch E.C., Tyree V., Morris H.C., USC/ISI MOSIS, US

The eigenfunctions from solutions of the Schrödinger equation for a triangular potential well are the Airy functions. The triangular potential approximation has been shown to be a good approximation for the charge density when the [...]

SOS Gate Capacitance Modeling

Morris H.C., Cumberbatch E.C., Abebe H., San Jose State University, US

A gate capacitance model for the SOS structure has been developed. The spatial dependence of the potential defines the changes in the charge density as well as the boundary conditions between the layers. The SOS [...]

Hole Transport Simulations in p-channel Si MOSFETs

Krishnan S., Vasileska D., Fischetti M.V., Arizona State University, US

We use a Monte Carlo method to investigate hole transport in ultrasmall p-channel MOSFETs with gate lengths of 25 nm. To model band-structure effects like warping, anisotropy and non-parabolicity on carrier transport, our device simulator [...]

Monte Carlo Transport Calculations of Strained SiGe Heterostructures from Ab-Initio Band-structures

Zorman B., Krishnan S., Vasileska D., Xu J., Van Schilfgaarde M., Arizona State University, US

The continued scaling of semiconductor devices creates numerous challenges which have to be overcome in order to achieve device behavior that satisfies speed and power constraints. Possible alternatives to conventional CMOS devices include strained-Si or [...]

Random Dopant Induced Fluctuations of Characteristics in Deep Sub-micron MOSFETs

Chou H-M, Lo S-C, Tsai J-H, Li Y., NCHC, TW

As the gate length of MOSFET devices shrinks down below 100 nm, the fluctuation of major devices parameter, namely, threshold voltage (VTH), subthreshold swing, drain current (ID) and subthreshold leakage current duo to influences of [...]

Monte Carlo Simulation of Transport in Two-Dimensional Electron Gas via Energy Relaxation

Zhao X., Nabet B., Drexel University, US

We simulate the process of energy relaxation in two-dimensional-electron-gas (2DEG) via electron-electron (e-e) scattering by Monte Carlo method. Results indicate a sub-picosecond energy relaxation response time to external perturbation. We suggest that carriers are subjected [...]

2D Quantum Mechanical Device Modeling and Simulation: Single and Multi-fin FinFET

Kim K., Park I-S, Won T., Inha University, KR

We propose a novel device structure (Si1-xGex/Si/Si1-xGex hetero-structure), which is called “center-channel (CC) double-gate (DG) MOSFET, ”. The device performance of the proposed FET structure was investigated with our two-dimensional quantum-mechanical simulator which is based [...]

Topography Simulation for Structural Analysis Using Cell Advancing Method

Lee J-G, Yoon S., Kwon O., Won T., Inha University, KR

We propose an cell advancing method which is different but stems from the traditional cell method for accurate topography simulation. It is considered that the cell advancing method is very suitable to figure out the [...]

RLC Reduction Scheme for Modeling Interconnection Line Delay in nano-CMOS Circuits

Jung C., Yoon S., Won T., Inha University, KR

In this paper we propose a realizable RLC-in-RLC-out technique to reduce parasitic parameters. The proposed technique is an efficient MOR (Model Order Reduction) method, which makes it possible to control the rise and delay time [...]

KMC Simple Model for BmIn Cluster Evolution during Boron Diffusion: Theoretical or Experimental Parameters of Point Defects

Yoo J-H, Hwang C-O, Seo J., Kwon O., Won T., Inha University, KR

In this paper, we discuss a model for investigating the KMC parameters for interstitial and vacancy and we propose a novel atomistic model to explain the evolution of interstitial clusters during boron diffusion for kinetic [...]

A Novel SPICE Compatible Current Model for OLED Circuit Simulation

Li Y., Lee B-S, Lee J.W., Lee B-S, Lee J.W., Lu C-S, Chen W-H, National Chiao Tung University, TW

high quality, and low power consumption display [1-2]. It is known that the brightness of the OLED is controlled by the current density of the device; therefore, precisely controlling the current density of active matrix [...]

Investigation of Metal Diffusion into Polymers via ab initio Simulations

Dai L., Yang S.W., Chen X.T., Tan V.B.C., Wu P., National University of Singapore, SG

Ab initio MD simulations were carried out to characterize the diffusion of Cu and Ta atoms/clusters inside an amorphous polymer. The diffusion coefficients of Cu and Ta atoms and their atomic clusters in linear amorphous [...]

A Nano-Transistor with a Cavity

Ravariu C., Ravariu F., Rusu A., Profirescu M., Ravariu C., Ravariu F., Politehnica University of Bucharest, RO

A SOI nanotransistor with a cavity was simulated. The global current is a superposition of a tunnel current through the cavity and an inversion current at the film bottom. The tunnel source-drain current prevails in [...]

Large Scale Simulation of the Nano-Scale High-Temperature-Superconductor Device for the Generating of Continuous Terahertz Waves

Iizuka M., Tachiki M., Minami K., Tejima S., Nakamura H., Research Orgnization Science and Technology, JP

Continuous terahertz waves have important applications in scientific and industrial fields such as medicine and information technology. Many methods (the quantum cascade laser and the photomixing method, etc.) are developed as a continuous terahertz wave [...]

A Distributed Compact Model for High-Density, On-Chip Trench Capacitors in High-Frequency Applications

Shastri S., Wu Y., Cai W.Z., Grivna G., ON Semiconductor, US

In this paper we describe for the first time a distributed model for the trench capacitor, which includes process parameters that may be extracted from the low-frequency measurement of one or two capacitor geometries. The [...]

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