Authors: C.Q. Sun, L.K. Pan and C.M. Li
Affilation: School EEE, NTU, Singapore, Singapore
Pages: 554 - 556
Keywords: nanostructures, photonics, electronics, dielectrics
Structural miniaturization provides us with a new freedom that is indeed fascinating. The new freedom of size not only allows us to tune the physical and chemical properties of a specimen by simply adjusting the shape and size but also enables us to gain information that is beyond the scope of conventional approaches. Here we show that a recent bond order-length-strength (BOLS) correlation could reconcile the size effect on nanosolid silicon with elucidation of information such as the single energy level of an isolated Si atom, the frequency of Si-Si dimer vibration, the upper limit of photoabsorption/emission, and dielectric suppression.
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