Authors: Y. Morikawa, T. Hayashi, K. Suu and M. Ishikawa
Affilation: ULVAC, Inc., Japan
Pages: 501 - 503
Keywords: deep etching, NLD, plasma, modulation
ULVAC’s Si deep etching technique has achieved high etching rate as high as 20 um/min as well as extremely high selectivity over resist mask as high as 100 or higher ensuring good etching performance.
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