Authors: D.A. Antonov, O.N. Gorshkov, A.P. Kasatkin, G.A. Maximov, D.A. Saveliev and D.O. Filatov
Affilation: University of Nizhny Novgorod, Russian Federation
Pages: 392 - 395
Keywords: nanoclusters, YZS films, STM, AFM, coulomb blockade, resonance tunneling
In present work, the electron properties of YSZ nanostructured films using combined Atomic Force Microscopy / Òunnel Spectroscopy (AFM\TS) have been investigated.It was demonstrated, the implantation of the films ZrO2(Y) by zirconium ions reduced forming channels tunnel current with lateral sizes from ~1-10 nm. It was founded, that I-V curves have staircase structures that is typical for coulomb blockade and oscillations that is typical of resonance tunneling through discrete electronic states in nano-size clasters. The form evolution of the separate current channel at increasing a bias voltage on the tunnel contact (probe-dielectric-substrate) has been investigated. It was shown that at low bias voltage the fine structure the channel arose.