Antonov D.A., Gorshkov O.N., Kasatkin A.P., Maximov G.A., Saveliev D.A., Filatov D.O.
University of Nizhny Novgorod, RU
Keywords: AFM, Coulomb blockade, nanoclusters, resonance tunneling, STM, YZS films
In present work, the electron properties of YSZ nanostructured films using combined Atomic Force Microscopy / Òunnel Spectroscopy (AFMTS) have been investigated.It was demonstrated, the implantation of the films ZrO2(Y) by zirconium ions reduced forming channels tunnel current with lateral sizes from ~1-10 nm. It was founded, that I-V curves have staircase structures that is typical for coulomb blockade and oscillations that is typical of resonance tunneling through discrete electronic states in nano-size clasters. The form evolution of the separate current channel at increasing a bias voltage on the tunnel contact (probe-dielectric-substrate) has been investigated. It was shown that at low bias voltage the fine structure the channel arose.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: May 8, 2005
Pages: 392 - 395
Industry sector: Advanced Materials & Manufacturing
Topics: Advanced Materials for Engineering Applications, Coatings, Surfaces & Membranes
ISBN: 0-9767985-1-4