Growth of 3C-SiC Nanowires on Nickel Coated Si(100) Substrate using Dichloromethylvinylsilane and Diethylmethylsilane by MOCVD Method

Boo J.-H.; Hyun J.S.; Kang B.-C.

Growth of 3C-SiC Nanowires on Nickel Coated Si(100) Substrate using Dichloromethylvinylsilane and Diethylmethylsilane by MOCVD Method

Kang B.-C., Hyun J.S., Boo J.-H.
Sungkyunkwan University, KR

Keywords: 3C-SiC, MOCVD, nanowire, Ni catalyst

3C-SiC nanowires have been deposited on nickel coated Si(100) substrates using single source precursors by thermal metal-organic chemical vapor deposition (MOCVD) method. Dichloromethylvinylsilane (CH2CHSiC(CH3)Cl2) and diethylmethylsilane (CH3 SiH(C2H5)2) were used as a single precursor without any carrier and bubbler gas.

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Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: May 8, 2005
Pages: 652 - 654
Industry sector: Advanced Materials & Manufacturing
Topic: Nanoparticle Synthesis & Applications
ISBN: 0-9767985-1-4