Authors: R.W. Dutton and C-H Choi
Affilation: Stanford University, United States
Pages: 287 - 290
Keywords: gate tunneling, DG SOI, quantum effect, CV
Simulation and modeling of gate tunneling current for thin-oxide MOSFETs and Double-Gate SOIs are discussed. Guidelines for design of leady MOS capacitors are proposed. Resonant gate tunneling current in DG SOI is simulated, based on quantum-mechanical models, and shown to be an issue of growing concern.