Authors: J. He, M. Chan and C. Hu
Affilation: University of California, Berkeley, United States
Pages: 171 - 174
Keywords: QME, inversion layer centriod, sub-band energy level, compact modeling
A novel analytical model to predict the sub-band energy levels and inversion charge centroid in MOS surface inversion layer with the parabolic potential well approximation has been presented in this paper. Based on coupled solution of Schrodinger equation and Poisson equation from WKB method and the parabolic potential well approximation, one transcendental equation of sub-band energy level has been rigorously derived and then the approximate analytical solutions for the subband energy levels and inversion charge centroid have been obtained. From our analysis, the effects of the substrate doping concentration and energy level number on the inversion centroid is predicted and one parameter meaning in the effective field expression is elucidated. Analytical results are compared with the previous numerical analysis and good agreement is found.
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