Jie B.B., Sah C-T
University of Florida, US
Keywords: four-component exact formulation, optimization voltage, space-charge-limited
Based on Sah’s 1996 four-component exact formula, a new optimized compact model is derived for long channel MOS transistors. This new model covers subthreshold and linear operation ranges using four independent optimization voltage parameters in the four components which are: parabolic space-charge-limited drift current, bulk-charge depressment of drift current, linear space-charge-limited diffusion current, and bulk-charge enhancement of diffusion current. By comparison of the four current components computed using the 1996 Sah exact formula and the optimized compact model, the four optimization voltages are extracted over operation drain voltage range. The RMS deviation is then obtained for the impurity concentration and oxide thickness matrix. With the extracted optimization voltage parameters, this new model has only one parameter to fit any experimental long channel transistor characteristics, which is the effective substrate dopant-impurity concentration with a known oxide thickness .
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 123 - 126
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Nanoparticle Synthesis & Applications
ISBN: 0-9767985-3-0