Authors: J. Watts, C. McAndrew, C. Enz, C. Galup-Montoro, G. Gildenblat, C. Hu, R. van Langevelde, M. Miura-Mattausch, R. Rios and C-T Sah
Affilation: Joint Paper, UN
Pages: 3 - 12
Keywords: compact model, surface potential model, charge based model, mosfet model
The combination of decreasing MOSFET dimensions and increasing use of MOSFETs for analog and RF application has created the need for advanced compact models for MOSFET circuit design. The first generation of MOSFET models rely on approximate solutions that are only valid in particular regions of operation connected mathematically to provide continuous solutions. This leads to inaccuracy between regions and therefore inaccuracy in simulating circuits where those regions are important to the circuit function. This paper provides an overview of the basic physics that must be modeled to build a compact model for the MOSFET and describes the approaches taken by the developers of several advanced models.