Authors: J. Deen, J.C. Ranuárez and C-H. Chen
Affilation: McMaster University, Canada
Pages: 35 - 39
Keywords: gate tunneling current, high-frequency noise, MOSFET
The impact of the gate tunneling current (GTC) on the noise performance of MOSFETs with very thin gate oxides is studied by developing analytical expressions for the four parameters that describe the noise performance of the MOSFET. It is found that the contribution of the GTC is most significant at low frequencies and that the frequencies at which this effect is important can go well into the Giga-Hertz range as the oxide thickness is reduced.
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