Authors: G. Gildenblat, X. Li, H. Wang, W. Wu, R. van Langevelde, A.J. Scholten, G.D.J. Smit and D.B.M. Klaassen
Affilation: Pennsylvania State University, United States
Pages: 19 - 24
Keywords: compact model, MOSFET, surface potential
PSP is the latest and the most advanced compact MOSFET model developed by merging the best features of the two surface potential-based models: SP (devel- oped at The Pennsylvania State University) and MM11 (developed by Philips Research). This work presents the main ideas enabling the development of PSP, model structure and its general features. Comparison with ex- perimental data and simulation examples are included as well.