Authors: C. Galup-Montoro, M. Schneider, V.C. Pahim and R. Rios
Affilation: Universidade Federal de Santa Catarina, Brazil
Pages: 13 - 18
Keywords: surface potential, inversion charge, compact model, comparison
Since the next generation MOSFET model will be based on either surface potential or inversion charge, a comparison between the two approaches is timely. In this paper, we will analyze in some detail the fundamentals of the two approaches. We will compare the expressions for inversion charge and gate capacitance.
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