Autran J-L, Munteanu D., Tintori O., Harrison S., Decarre E., Skotnicki T.
CNRS, FR
Keywords: analytical modeling, double gate MOSFET, quantum effects, threshold voltage
A quantum-mechanical fully analytical model of the threshold voltage for long-channel Double-Gate MOSFETs has been developed. This model is based on analytical solutions for the decoupled Poisson and Schrödinger equations in the silicon film. The model is completely validated using a full 2D quantum-mechanical numerical simulation code. Using this original model, a detailed comparison between symmetric and asymmetric Double-Gate architectures has been performed in terms of threshold voltage dependence with film thickness and doping level.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: March 7, 2004
Pages: 163 - 166
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9728422-8-4