Authors: H. Tran and M. Schroter
Affilation: University of Technology Dresden, Germany
Pages: 102 - 107
Keywords: bipolar transistor, analytical modeling, compact model
An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the field related transit time components. Comparison to device simulation results show good agreement.
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