Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2

Compact Modeling Chapter 3

Technology Limits and Compact Model for SiGe Scaled FETs

Authors: R.W. Dutton and C-H Choi

Affilation: Stanford, United States

Pages: 52 - 55

Keywords: strained-Si, STI, stress, ESD, capacitance

Stress relaxation in strained-Si MOSFETs can be significant in the presence of compressive stress imposed by trench isolation, especially for highly scaled active regions. Stress of the strained region is reduced by 2/3 when the active region is scaled from Lactive=0.4 µm to 0.1 µm. Mobility can be lower by 50 % for narrow active widths resulting from the strain relaxation. The strain relaxation may restrict the use of strained-Si MOSFETs for technology nodes beyond 25 nm. Electrical and thermal characteristics of strained-Si devices are investigated and a compact junction capacitance model for strained-Si MOSFET suitable for circuit simulation is proposed.

ISBN: 0-9728422-8-4
Pages: 519
Hardcopy: $79.95