Authors: S. Beysserie, J. Branlard, S. Aboud, S.M. Goodnick, T. Thornton and M. Saraniti
Affilation: Illinois Institute of Technology, United States
Pages: 25 - 28
Keywords: full-band simulation, SOI MOSFET, frequency analysis, Monte Carlo, device modeling, device simulation, MOSFET, germanium
We model and simulate novel fully depleted (FD) sub-50nm gate lengths MOSFET structures using a full-band particle simulator based on the Cellular Monte Carlo (CMC) method that provides an accurate transport model at the high electric fields present in these nanoscale devices. Simulations of Germanium- and Silicon-On-Insulator devices (GOI and SOI, respectively) are performed to quantitatively investigate the predicted increase of performance of GOI technology. A comparison of static and dynamic properties of similar GOI and SOI devices is performed for 50 nm and 35 nm gate lengths.