Authors: G. Casinovi
Affilation: Georgia Institute of Technology, United States
Pages: 5 - 8
Keywords: noise, simulation, device modeling
This paper describes an algorithm for numerical computation of the power spectral density (PSD) of channel noise in nanoscale MOSFETs. Noise generation phenomena inside the channel are modeled as random processes, represented by distributed sources that are added to the equations describing charge transport in the channel. The resulting set of differential equations is then solved using a frequency-domain simulation algorithm, yielding the total noise PSD at the device terminals. Comparisons between simulated and measured values of the noise PSD can then be used to test the validity of noise models for nanoscale MOSFETs. Simulation results obtained on a MOSFET under various DC bias conditions are presented.