Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2

Advanced Semiconductors Chapter 1

Spectral Analysis of Channel Noise in Nanoscale MOSFETS

Authors: G. Casinovi

Affilation: Georgia Institute of Technology, United States

Pages: 5 - 8

Keywords: noise, simulation, device modeling

This paper describes an algorithm for numerical computation of the power spectral density (PSD) of channel noise in nanoscale MOSFETs. Noise generation phenomena inside the channel are modeled as random processes, represented by distributed sources that are added to the equations describing charge transport in the channel. The resulting set of differential equations is then solved using a frequency-domain simulation algorithm, yielding the total noise PSD at the device terminals. Comparisons between simulated and measured values of the noise PSD can then be used to test the validity of noise models for nanoscale MOSFETs. Simulation results obtained on a MOSFET under various DC bias conditions are presented.

ISBN: 0-9728422-8-4
Pages: 519
Hardcopy: $79.95

2015 & Newer Proceedings

Nanotech Conference Proceedings are now published in the TechConnect Briefs

NSTI Online Community