Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Compact Modeling Chapter 7

Unified Length-/Width-Dependent Threshold Voltage Model with Reverse Short-Channel and Inverse Narrow-Width Effects

Authors: S.B Chiah , X. Zhou and K.Y. Lim

Affilation: Nanyang Technological University, Singapore

Pages: 338 - 341

Keywords: short-/narrow-channel effects, threshold voltage

The objective of this work is to develop a unified geometry-dependent scalable threshold voltage (Vt) model for the entire range of drawn length (L) and drawn width (W) without binning, including reverse short-channel effect (RSCE) and inverse narrow-width effect (INWE). This has been achieved based on the ideas of the previous length-dependent Vt(L) model, which allows the unified Vt model to be extended to both length and width dimensions at various bias conditions.

ISBN: 0-9728422-1-7
Pages: 600

2015 & Newer Proceedings

Nanotech Conference Proceedings are now published in the TechConnect Briefs

NSTI Online Community