Authors: A.J. Scholten, L.F. Tiemeijer, R. van Langevelde, R.J. Havens, A.T.A. Zegers-van Duijnhoven, V.C. Venezia and D. Klaassen
Affilation: Philips Research Laboratories Eindhoven, Niger
Pages: 286 - 289
Keywords: noise, RF CMOS, MOSFET, compact modeling, thermal noise, induced gate noise, avalanche noise, shot noise
The RF noise in 0.18um CMOS technology has been measured and modeled. Compared to long-channel theory we find only a moderate enhancement of the drain and current noise for short-channel MOSFETS and, due to the gate resistance, a more significant enhancement of the gate current noise. The experimental results are accurately describe by a non-quasi-static RF model, based on channel segmentation. Experimental evidence is shown for two additional noise mechanisms: (i) avalanche noise associated with the avalanche current from drain to bulk, and (ii)j shot noise in the direct-tunneling gate leakage current.