Authors: C. McAndrew, T. Bettinger, L. Lemaitre and M. Tutt
Affilation: Motorola, United States
Pages: 278 - 281
Keywords: VBIC, BJT modeling, SPICE
This paper reviews the VBIC BJT model, and details updates in the version 1.3 release. VBICv1.3 includes explicit interaction with siulator global parameters gmin and pnjmaxi, explicit limiting of local temperature rise and exponential arguments to aid convergence, and an excess phase formulation that obviates the need for inductor currents, and is implementable with only voltage controlled current and charge sources. Enhancements to BVIC include modeling of quasi-neutral base recombination, depletion modulation of RC for vertical PHPs, an arbitrary collector doping profile model for Cbc for accurate large-signal distortion modeling, improved electrothermal modeling, and a collector pinning modeling for PHPs.
Nanotech Conference Proceedings are now published in the TechConnect Briefs