Authors: C. Galup-Montoro, M.C. Schneider, A.I.A. Cunha and O.C. Gouveia-Filho
Affilation: Universidade Federal de Santa Catarina, Brazil
Pages: 254 - 257
Keywords: charge control model, compact MOSFET model, MOS transistor
This paper presents a physics-based advanced compact MOSFET (ACM) model. The ACM model is composed of very simple expressions, valid for any inversion level, conserves charge and preserves the source-drain symmetry of the transistor. We highlight the theory and approximations behind the ACM model and show its usefulness as a powerful tool for characterization, simulation, and design.