Authors: C. Rivas and R. Lake
Affilation: University of California, United States
Pages: 137 - 140
Keywords: Si, nanowire, full-band, computational nanoelectronics
Full-band, three-dimensional (3D), atomistic, non-equilibrium Green fuction simulations are used to model Si nanowires. Full-band and single band calculations are compared. The effect of surface passivation is analyzed in the full-band simulations. Our approach to the difficult modeling issues is discussed.
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