Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Nano Scale Device Modeling Chapter 3

Practical Atomistic Dopant Diffusion Simulation of Shallow Junction Fabrication Processes and Intrinsic Fluctuations for sub-100nm MOSFETs

Authors: M. Hane, T. Ezaki and T. Ikezawa

Affilation: NEC Corporation, Japan

Pages: 125 - 128

Keywords: process simulation, device simulation, TCAD, Monte Carlo, atomistic simulation

We studied sophisticated shallow junction fabrication processes, i.e. spike-annealing and flash-lamp annealing, using our recently developed atomistic dopant diffusion simulator. Through its use of kinetic Monte Carlo procedure, considering all the possible charged species and Fermi-level effects on drift diffusion and clustering reactions, and through boron diffusion and activation kinetics obtained through ab-initio calculation incorporated into it, this simulator can reproduce various spike anneal experiments without any arbitrary parameter fitting. The simulator also enables us to calculate three dimensional dopant atom distribution for actual sub-100nm MOSFETs. By coupling three-dimensional atomistic process and device simulator, we were able to perform statistical simulation to evaluate the intrinsic fluctuation induced by the discrete dopant atoms.

ISBN: 0-9728422-1-7
Pages: 600