Authors: C.D. Nguyen, C. Jungemann, B. Neihues, B. Meinerzhagen, J. Sedlmeir and W. Molzer
Affilation: ITEM-University of Bremen, Germany
Pages: 56 - 59
Keywords: MOS devices, quantization effects, inversion layer, mobility
In this work a quantum correction model for the hole inversion layer based on the Improved Modified Local Density Approximation (IMLDA) and a corresponding channel mobility model compatible to the IMLDA quantum corrected spatial p-density and field distributions are presented. The combination of both models, which are well suited for implementation into TCAD device simulators, correctly describes the effects of hole inversion layer quantization on threshold voltage, capacitance and current without increasing the computation time. The IMLDA model agrees well with results of the self-consistent solution of Schroedinger and Poisson equations (SE/PE) for temperatures from 200K to 500K and for doping concentrations up to 5x10^18/cm^3. The new mobility model is compatible to the IMDLA quantum corrected charge densities and agrees well with experimental mobility data within the same range of temperatures and doping densities. A big advantage of the IMLDA model and the new mobility model is their low computational cost and their numerical robustness, because both depend only locally on field, doping and temperature.
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