Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Semiconductors Chapter 1

An Energy Transport Gate Current Model Accounting for a Non-Maxwellian Energy Distribution

Authors: A. Gehring, T. Grasser, H. Kosina and S. Selberherr

Affilation: Institute for Microelectronics, Vienna, Austria

Pages: 48 - 51

Keywords: tunneling, simulation, non-Maxwellian

We report on a new formulation for the description of hot electron tunneling through dielectrics. It is based on an expression which accounts for the non-Maxwellian shape of the electron energy distribution function (EED) and exactly reproduces its first three even moments n, Tn, and beta. Here we present a simplified model applicable within the framework of the energy-transport model which only provides n and Tn. Simulation results of long channel EEPROM devices and short channel MOSFETs are presented which show excellent agreement with Monte Carlo results and measurements.

ISBN: 0-9728422-1-7
Pages: 600

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