Authors: S. Wigger-Aboud, M. Saraniti, S. Goodnick, A. Brodschelm and A. Leitenstorfer
Affilation: Rush Medical Center and Illinois Institute of Technology, United States
Pages: 28 - 31
Keywords: silicon, optical excitation, particle-based simulation
A fullband particle-based simulator is used to model photo-generated electron-hole pairs in Si. This work is motivated by experimental measurements of optically excited Si pin diodes. Results will be compared qualitatively to investigate charge transport behavior on ultra-short time scales.