Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Semiconductors Chapter 1

Modelling of Gain Control in SiGe HBTs and Si Bipolar Transistors by Ge Incorporation in the Polysilicon Emitter

Authors: V.D. Kunz, C.H. de Groot, I.M. Anteney, A.I. Abdul-Rahim, S. Hall, P.L.F. Hemment, Y. Wang and P. Ashburn

Affilation: University of Southampton, United Kingdom

Pages: 16 - 19

Keywords: polySiGe emitter, bipolar transistor, gain control

In SiGe HBTs high values of fT are achieved by using aggressive Ge profiles in the base. A side effect is very high gains, which can lead to a degradation of BVCEO. This paper investigates Ge incorporation in polysilicon emitters to give gain control independent of the base Ge profile. A model is developed illustrating the reduced gain from Ge incorporation and increased gain from the interfacial oxide layer.

ISBN: 0-9728422-1-7
Pages: 600