A Compact Model for an IC Lateral Diffused MOSFET Using the Lumped-Charge Methodology

Subramanian Y., Lauritzen P.O., Green K.R.
Texas Instruments, US

Keywords: LDMOS Model, Lumped-Charge, MOSFET, Power

A compact model for an IC Lateral Diffused MOSFET is developed using the Lumped-Charge Methodology[1]. Model equations and key performance characteristics are documented. They satisfy the requirements of Power MOSFET models[2], unlike the competitive macromodels developed from short-channel, low-power MOSFET models.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Pages: 284 - 288
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-4-6