Richards D., Adams J.B., Borucki L.J.
Arizona State University, US
Keywords: electromigration, void growth, void nucleation
We calculate the formation energy of small voids in Al and Cu, both at the bulk and at grain boundaries, using the Embedded Atom Method. Then, we use those results as input to a Kinetic Monte Carlo model of void nucleation and growth in Al interconnects. Preliminary test cases of the Monte Carlo model are discussed.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Pages: 471 - 474
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-4-6