Akis R., Vasileska D., Ferry D.K.
Arizona State University, US
Keywords: ballistic transport, discrete impurities, quantum dots, Scaled Si-MOSFETs, thres-hold voltage
A brief summary of some of the simulation efforts within the Nanostructure Research Group at Arizona State University is presented, with emphasis on the tools used for modeling deep-submicrometer devices and quantum dot structures under low bias conditions. The results obtained with our 3D drift-diffusion simulator for 0.1 mm n-channel MOSFETs show that the atomistic nature of the impurity atoms has significant influence on the device transfer charac-teristics. In the case of quantum dot structures, we find that the level quantization is preserved even as the dot is opened, but that there is a selection of particular eigenstates that depends strongly on the positions of the contacts
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Pages: 384 - 387
Industry sector: Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems, Nanoelectronics
ISBN: 0-9666135-4-6