MSM 99
MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems

Quantum Device Modeling Chapter 11

An Overview of the 3D Simulation Efforts at Arizona State University Directed Towards Understanding Transport in the Quantum Dots and the Ultra-Small Devices of the Future

Authors: R. Akis, D. Vasileska and D.K. Ferry

Affilation: Arizona State University, United States

Pages: 384 - 387

Keywords: scaled Si-MOSFETs, discrete impurities, thres-hold voltage, quantum dots, ballistic transport

A brief summary of some of the simulation efforts within the Nanostructure Research Group at Arizona State University is presented, with emphasis on the tools used for modeling deep-submicrometer devices and quantum dot structures under low bias conditions. The results obtained with our 3D drift-diffusion simulator for 0.1 mm n-channel MOSFETs show that the atomistic nature of the impurity atoms has significant influence on the device transfer charac-teristics. In the case of quantum dot structures, we find that the level quantization is preserved even as the dot is opened, but that there is a selection of particular eigenstates that depends strongly on the positions of the contacts

ISBN: 0-9666135-4-6
Pages: 697