MSM 99
MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems

Implant and Diffusion Modeling Chapter 10

Linking of Atomistic Modeling to Macroscopic Behavior for Front End Processes
S.T. Dunham
Boston University, US

Modeling and Simulation of Non-Linear Damage Growth During Ion Implants in Silicon
M-S. Son, H-J. Hwang
Chung-Ang University, KR

Accurate Three-Dimensional Simulation of Damage Caused by Ion Implantation
A. Hössinger and S. Selberherr
TU Vienna, AT

Ab-Initio TCAD Models of Dopant Diffusion in Silicon
J.S. Nelson, A.F. Wright and P.A. Schultz
Sandia National Laboratory, US

Ab-Initio Pseudopotential Calculations of Boron Diffusion in Silicon
W. Windl, R. Stumpf, M. Masquelier, M. Bunea and S.T. Dunham
Motorola, US

ISBN: 0-9666135-4-6
Pages: 697