Mladenovic D., Hutchins J., Tran E., Lu S.
Motorola, US
Keywords: diffused piezoresistors, span, temperature coefficients
This article reviews elements needed to be considered in order to improve accuracy of the temperature coefficient and sensitivity (span) simulation for diffused piezoresistors. Modeling is done through an algorithm developed in ‘Mathematica’. Input parameters for the model are device doping profiles The algorithm divides doping profile into fnite elements that are considered infinitesimal, uniformly doped areas. The model was evaluated on a number of different experimental parts. The same test samples were used for electrical data gathering and SIMS analysis. The test devices had junction depths varied between 0.6 and 4 microns, and surface boron concentration between 5E17 cm-3 and lE18 cm-3. Simulation results correlate very well with measurements.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Published: April 6, 1998
Pages: 145 - 150
Industry sector: Sensors, MEMS, Electronics
Topics: MEMS & NEMS Devices, Modeling & Applications, Modeling & Simulation of Microsystems
ISBN: 0-96661-35-0-3